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Development of a new type of SiGe thin strain relaxed buffer based on the incorporation of a carbon-containing layer
Publication:
Development of a new type of SiGe thin strain relaxed buffer based on the incorporation of a carbon-containing layer
Date
2003
Meeting abstract
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Delhougne, Romain
;
Meunier-Beillard, Philippe
;
Caymax, Matty
;
Loo, Roger
;
Vandervorst, Wilfried
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Abstract
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1912
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations
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Views
1912
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations