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Zn channeled implantation in GaN: damages investigated by using high resolution XTEM and channeling RBS

dc.contributor.authorDing, F.R.
dc.contributor.authorHe, W.
dc.contributor.authorVantomme, Andre
dc.contributor.authorZhao, Q.
dc.contributor.authorPipeleers, B.
dc.contributor.authorJacobs, K.
dc.contributor.authorMoerman, Ingrid
dc.date.accessioned2021-10-15T04:33:28Z
dc.date.available2021-10-15T04:33:28Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7522
dc.sourceIIOimport
dc.titleZn channeled implantation in GaN: damages investigated by using high resolution XTEM and channeling RBS
dc.typeJournal article
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage70
dc.source.endpage73
dc.source.journalMaterials Science and Engineering B
dc.source.issue1
dc.source.volume98
imec.availabilityPublished - open access


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