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Characterization of the B and As pile-up at the Si-SiO2 interface

dc.contributor.authorFruehauf, Jens
dc.contributor.authorLindsay, Richard
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorMaex, Karen
dc.contributor.authorBergmaier, A.
dc.contributor.authorDollinger, G.
dc.contributor.authorKoch, F.
dc.date.accessioned2021-10-15T04:44:11Z
dc.date.available2021-10-15T04:44:11Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7591
dc.sourceIIOimport
dc.titleCharacterization of the B and As pile-up at the Si-SiO2 interface
dc.typeProceedings paper
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorMaex, Karen
dc.source.peerreviewno
dc.source.beginpage399
dc.source.endpage404
dc.source.conferenceUltra Shallow Junctions. 7th Int. Worksh. Fabrication, Characterization and Modeling of Ultra Shallow Doping Profiles in Semic.
dc.source.conferencedate27/04/2003
dc.source.conferencelocationSanta Cruz, CA USA
imec.availabilityPublished - imec


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