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Modeling the inversion electron tunneling currents through ultrathin oxides/gate stacks

dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorBlomme, Pieter
dc.contributor.authorHenson, Kirklen
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-15T04:49:25Z
dc.date.available2021-10-15T04:49:25Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7622
dc.sourceIIOimport
dc.titleModeling the inversion electron tunneling currents through ultrathin oxides/gate stacks
dc.typeProceedings paper
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewno
dc.source.beginpage49
dc.source.endpage52
dc.source.conferenceULIS Conference Proceedings
dc.source.conferencedate20/03/2003
dc.source.conferencelocationUdine Italy
imec.availabilityPublished - imec


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