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An investigation of the electron tunneling leakage current through ultrathin oxides/high-k gate stacks at inversion conditions

dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorBlomme, Pieter
dc.contributor.authorHenson, Kirklen
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-15T04:49:35Z
dc.date.available2021-10-15T04:49:35Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7623
dc.sourceIIOimport
dc.titleAn investigation of the electron tunneling leakage current through ultrathin oxides/high-k gate stacks at inversion conditions
dc.typeProceedings paper
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewno
dc.source.beginpage287
dc.source.endpage290
dc.source.conferenceIEEE International Conference on Simulation of Semiconductor Processes and Devices - SISPAD
dc.source.conferencedate3/09/2003
dc.source.conferencelocationBoston USA
imec.availabilityPublished - imec


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