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dc.contributor.authorGray, W.D.
dc.contributor.authorLoboda, M.J.
dc.contributor.authorBremmer, J.N.
dc.contributor.authorStruyf, Herbert
dc.contributor.authorLepage, Muriel
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorAlves Donaton, Ricardo
dc.contributor.authorSleeckx, Erik
dc.contributor.authorStucchi, Michele
dc.contributor.authorLanckmans, Filip
dc.contributor.authorGao, Teng
dc.contributor.authorBoullart, Werner
dc.contributor.authorCoenegrachts, Bart
dc.contributor.authorMaenhoudt, Mireille
dc.contributor.authorVanhaelemeersch, Serge
dc.contributor.authorMeynen, H.
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-15T04:50:30Z
dc.date.available2021-10-15T04:50:30Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7628
dc.sourceIIOimport
dc.titleProcess optimization and integration of trimethylsilane-deposited a-SiC:H and a-SiCO:H dielectric thin films for damascene processing
dc.typeJournal article
dc.contributor.imecauthorStruyf, Herbert
dc.contributor.imecauthorSleeckx, Erik
dc.contributor.imecauthorStucchi, Michele
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorCoenegrachts, Bart
dc.contributor.imecauthorVanhaelemeersch, Serge
dc.contributor.imecauthorMaex, Karen
dc.contributor.orcidimecSleeckx, Erik::0000-0003-2560-6132
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.source.peerreviewno
dc.source.beginpageG404
dc.source.endpageG411
dc.source.journalJournal of the Electrochemical Society
dc.source.issue7
dc.source.volume150
imec.availabilityPublished - imec


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