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Analysis of short channel MOSFET behavior after gate oxide breakdown and its impact on digital circuit reliability

dc.contributor.authorGroeseneken, Guido
dc.contributor.authorKaczer, Ben
dc.contributor.authorDegraeve, Robin
dc.date.accessioned2021-10-15T04:51:31Z
dc.date.available2021-10-15T04:51:31Z
dc.date.issued2003-04
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7634
dc.sourceIIOimport
dc.titleAnalysis of short channel MOSFET behavior after gate oxide breakdown and its impact on digital circuit reliability
dc.typeProceedings paper
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewno
dc.source.beginpage173
dc.source.endpage198
dc.source.conferenceSilicon Nitride and Silicon Dioxide Thin Insulating Films VII
dc.source.conferencedate28/04/2003
dc.source.conferencelocationParis France
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. 2003-02


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