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High resolution 2D scanning spreading resistance microscopy (SSRM) of thin film SOI MOSFETs with ultra short effective channel length

dc.contributor.authorHartwich, J.
dc.contributor.authorAlvarez, David
dc.contributor.authorDreeskornfeld, L.
dc.contributor.authorHoffman, F.
dc.contributor.authorKretz, J.
dc.contributor.authorLandgraf, E.
dc.contributor.authorLuyken, R.J.
dc.contributor.authorRösner, W.
dc.contributor.authorSchulz, T.
dc.contributor.authorSpecht, M.
dc.contributor.authorStädele, M.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorRisch, Lothar
dc.date.accessioned2021-10-15T04:52:51Z
dc.date.available2021-10-15T04:52:51Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7642
dc.sourceIIOimport
dc.titleHigh resolution 2D scanning spreading resistance microscopy (SSRM) of thin film SOI MOSFETs with ultra short effective channel length
dc.typeProceedings paper
dc.contributor.imecauthorVandervorst, Wilfried
dc.source.peerreviewno
dc.source.beginpage35
dc.source.endpage36
dc.source.conferenceIEEE International SOI Conference
dc.source.conferencedate29/09/2003
dc.source.conferencelocationNewport Beach, CA USA
imec.availabilityPublished - imec


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