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Model for defect generation at the (100) Si/SiO2 interface during electron injection in MOS structures

dc.contributor.authorHoussa, Michel
dc.contributor.authorAutran, J.L.
dc.contributor.authorHeyns, Marc
dc.contributor.authorStesmans, Andre
dc.date.accessioned2021-10-15T04:57:04Z
dc.date.available2021-10-15T04:57:04Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7665
dc.sourceIIOimport
dc.titleModel for defect generation at the (100) Si/SiO2 interface during electron injection in MOS structures
dc.typeJournal article
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorStesmans, Andre
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewno
dc.source.beginpage749
dc.source.endpage752
dc.source.journalApplied Surface Science
dc.source.volume212-213
imec.availabilityPublished - imec


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