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Transient sputter yields, build-up of the altered layer and Ge-segregation as a function of the O2+ ion-fluence in SiGe

dc.contributor.authorHuyghebaert, Cedric
dc.contributor.authorBrijs, Bert
dc.contributor.authorJanssens, Tom
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-15T04:57:45Z
dc.date.available2021-10-15T04:57:45Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7669
dc.sourceIIOimport
dc.titleTransient sputter yields, build-up of the altered layer and Ge-segregation as a function of the O2+ ion-fluence in SiGe
dc.typeJournal article
dc.contributor.imecauthorHuyghebaert, Cedric
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecHuyghebaert, Cedric::0000-0001-6043-7130
dc.source.peerreviewno
dc.source.beginpage56
dc.source.endpage61
dc.source.journalApplied Surface Science
dc.source.volume203-204
imec.availabilityPublished - imec


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