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Depth profiling of ZrO2/SiO2/Si stacks-TOF-SIMS and computer simulation study

dc.contributor.authorIgnatova, V.A.
dc.contributor.authorConard, Thierry
dc.contributor.authorMoeller, W.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorGijbels, R.
dc.date.accessioned2021-10-15T04:59:42Z
dc.date.available2021-10-15T04:59:42Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7680
dc.sourceIIOimport
dc.titleDepth profiling of ZrO2/SiO2/Si stacks-TOF-SIMS and computer simulation study
dc.typeMeeting abstract
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.source.peerreviewno
dc.source.beginpage94
dc.source.conferenceInternational Conference on Secondary Ion Mass Spectrometry - SIMS XIV
dc.source.conferencedate14/09/2003
dc.source.conferencelocationSan Diego, CA USA
imec.availabilityPublished - imec


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