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Improved HEMT devices from AlGaN/GaN heterojunctions using AIN interlayers

dc.contributor.authorJiménez, A.
dc.contributor.authorTirado, J.M.
dc.contributor.authorBougrioua, Z.
dc.contributor.authorBraña de Cal, Alejandro F.
dc.contributor.authorGrajal, J.
dc.contributor.authorCubilla, P.
dc.contributor.authorMuñoz, E.
dc.contributor.authorCalleja, E.
dc.contributor.authorVerdu, M.
dc.contributor.authorMontojo, M.T.
dc.contributor.authorMoerman, Ingrid
dc.date.accessioned2021-10-15T05:02:12Z
dc.date.available2021-10-15T05:02:12Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7694
dc.sourceIIOimport
dc.titleImproved HEMT devices from AlGaN/GaN heterojunctions using AIN interlayers
dc.typeMeeting abstract
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.source.peerreviewno
dc.source.conferenceAbstracts Book WOCSDICE - 27th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe
dc.source.conferencedate26/05/2003
dc.source.conferencelocationFürigen Switzerland
imec.availabilityPublished - imec


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