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Experimental verification of SRAM cell functionality after hard and soft gate oxide breakdowns

dc.contributor.authorKaczer, Ben
dc.contributor.authorDegraeve, Robin
dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorJurczak, Gosia
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-15T05:06:06Z
dc.date.available2021-10-15T05:06:06Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7715
dc.sourceIIOimport
dc.titleExperimental verification of SRAM cell functionality after hard and soft gate oxide breakdowns
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewno
dc.source.beginpage75
dc.source.endpage78
dc.source.conferenceProceedings 33rd European Solid-State Devices Research Conference - ESSDERC
dc.source.conferencedate16/09/2003
dc.source.conferencelocationEstoril Portugal
imec.availabilityPublished - imec


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