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dc.contributor.authorKaushik, V.
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorCaymax, Matty
dc.contributor.authorYoung, E.
dc.contributor.authorRöhr, Erika
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorDelabie, Annelies
dc.contributor.authorClaes, Martine
dc.contributor.authorShi, Xiaoping
dc.contributor.authorChen, Jerry
dc.contributor.authorCarter, Richard
dc.contributor.authorConard, Thierry
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorSchaekers, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-15T05:07:14Z
dc.date.available2021-10-15T05:07:14Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7721
dc.sourceIIOimport
dc.titleCompatibility of polysilicon with HfO2-based gate dielectrics for CMOS applications
dc.typeProceedings paper
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage391
dc.source.endpage396
dc.source.conferenceULSI Process Integration III
dc.source.conferencedate28/04/2003
dc.source.conferencelocationParis France
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. 2003-06


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