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Stress induced charge trapping effects in SiO2/Al2O3 gate stacks with TiN electrodes

dc.contributor.authorKerber, Andreas
dc.contributor.authorCartier, E.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.contributor.authorSchwalke, U.
dc.date.accessioned2021-10-15T05:07:56Z
dc.date.available2021-10-15T05:07:56Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7724
dc.sourceIIOimport
dc.titleStress induced charge trapping effects in SiO2/Al2O3 gate stacks with TiN electrodes
dc.typeJournal article
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.beginpage6627
dc.source.endpage6630
dc.source.journalJournal of Applied Physics
dc.source.issue10
dc.source.volume94
imec.availabilityPublished - imec


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