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Charge trapping and dielectric reliability of SiO2/AI2O3 gate stacks with TiN electrodes

dc.contributor.authorKerber, Andreas
dc.contributor.authorCartier, Eduard
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRoussel, Philippe
dc.contributor.authorPantisano, Luigi
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.contributor.authorSchwalke, U.
dc.date.accessioned2021-10-15T05:08:35Z
dc.date.available2021-10-15T05:08:35Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7727
dc.sourceIIOimport
dc.titleCharge trapping and dielectric reliability of SiO2/AI2O3 gate stacks with TiN electrodes
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.source.peerreviewno
dc.source.beginpage1261
dc.source.endpage1269
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue5
dc.source.volume50
imec.availabilityPublished - imec


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