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A detailed experimental investigation of impact ionization in n-channel metal-oxide-semiconductor field-effect-transistors at very low drain voltages

dc.contributor.authorKottantharayil, Anil
dc.contributor.authorMahapatra, S.
dc.contributor.authorEisele, I.
dc.date.accessioned2021-10-15T05:13:36Z
dc.date.available2021-10-15T05:13:36Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7753
dc.sourceIIOimport
dc.titleA detailed experimental investigation of impact ionization in n-channel metal-oxide-semiconductor field-effect-transistors at very low drain voltages
dc.typeJournal article
dc.source.peerreviewno
dc.source.beginpage995
dc.source.endpage1001
dc.source.journalSolid-State Electronics
dc.source.issue6
dc.source.volume47
imec.availabilityPublished - imec


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