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Etching of HfO2, deposited on LPCVD Si3N4, and cleaning of Hf residues

dc.contributor.authorKraus, Harald
dc.contributor.authorSnow, Jim
dc.contributor.authorVan Doorne, Patrick
dc.contributor.authorMertens, Paul
dc.contributor.authorKovacs, F.
dc.date.accessioned2021-10-15T05:13:58Z
dc.date.available2021-10-15T05:13:58Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7755
dc.sourceIIOimport
dc.titleEtching of HfO2, deposited on LPCVD Si3N4, and cleaning of Hf residues
dc.typeOral presentation
dc.contributor.imecauthorMertens, Paul
dc.source.peerreviewno
dc.source.conferenceTwelfth International Symposium on Semiconductor Manufacturing - ISSM
dc.source.conferencedate30/09/2003
dc.source.conferencelocationSan Jose, CA USA
imec.availabilityPublished - imec


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