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Large reduction of saturation carrier densities by strain in InGaAs/AlGaAs quantum wells

dc.contributor.authorMoloney, M.
dc.contributor.authorHegarty, J.
dc.contributor.authorBuydens, Luc
dc.contributor.authorDemeester, Piet
dc.date.accessioned2021-09-29T13:11:49Z
dc.date.available2021-09-29T13:11:49Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/775
dc.sourceIIOimport
dc.titleLarge reduction of saturation carrier densities by strain in InGaAs/AlGaAs quantum wells
dc.typeProceedings paper
dc.contributor.imecauthorDemeester, Piet
dc.source.peerreviewno
dc.source.beginpage569
dc.source.endpage72
dc.source.conferenceOptical Computing. Proceedings of the International Conference; 22-25 Aug. 1994; Edinburgh, UK.
dc.source.conferencelocation
imec.availabilityPublished - imec


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