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Silicide scaling: Co, Ni or CoNi ?

dc.contributor.authorLauwers, Anne
dc.contributor.authorKittl, Jorge
dc.contributor.authorAkheyar, Amal
dc.contributor.authorVan Dal, Mark
dc.contributor.authorChamirian, Oxana
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorLindsay, Richard
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-15T05:19:52Z
dc.date.available2021-10-15T05:19:52Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7785
dc.sourceIIOimport
dc.titleSilicide scaling: Co, Ni or CoNi ?
dc.typeProceedings paper
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorMaex, Karen
dc.source.peerreviewno
dc.source.beginpage167
dc.source.endpage176
dc.source.conferenceAdvanced Short-Time Thermal Processing for Si-based CMOS devices
dc.source.conferencedate27/04/2003
dc.source.conferencelocationParis France
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; PV 2003-14


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