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Intra-die temperature non uniformity related to front side emissivity depandence during rapid thermal annealing

dc.contributor.authorLaviron, C.
dc.contributor.authorLindsay, Richard
dc.contributor.authorMichallet, A.
dc.contributor.authorHalimaoui, A.
dc.contributor.authorGranneman, E.
dc.date.accessioned2021-10-15T05:20:05Z
dc.date.available2021-10-15T05:20:05Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7786
dc.sourceIIOimport
dc.titleIntra-die temperature non uniformity related to front side emissivity depandence during rapid thermal annealing
dc.typeProceedings paper
dc.source.peerreviewno
dc.source.beginpage3
dc.source.endpage10
dc.source.conferenceAdvanced Short-Time Thermal Processing for Si-Based CMOS Devices
dc.source.conferencedate28/04/2003
dc.source.conferencelocationParis France
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. 2003-14


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