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Avoiding loading effects and facet growth: key parameters for a successful implementation of selective epitaxial SiGe deposition for HBT-BiCMOS and high-mobility hetero-channel pMOS devices
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1883 since deposited on 2021-10-15
Acq. date: 2026-01-07
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Metrics
Views
1883 since deposited on 2021-10-15
Acq. date: 2026-01-07
Citations