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Defect-free Si thinning by In Situ HCI vapour etching

dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorRichard, Olivier
dc.contributor.authorVerheyen, Peter
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2021-10-15T05:27:12Z
dc.date.available2021-10-15T05:27:12Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7820
dc.sourceIIOimport
dc.titleDefect-free Si thinning by In Situ HCI vapour etching
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage199
dc.source.endpage203
dc.source.conferenceUltra Clean Processing of Silicon Surfaces 2002 - UCPSS
dc.source.conferencedate16/09/2002
dc.source.conferencelocationOostende Belgium
imec.availabilityPublished - open access
imec.internalnotesSolid-State Phenomena; Vol. 92


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