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In-line and non-destructive analysis of epitaxial Si1-x-yGexCy by spectroscopic ellipsometry and comparison with other established techniques

dc.contributor.authorLoo, Roger
dc.contributor.authorMeunier-Beillard, Philippe
dc.contributor.authorDelhougne, Romain
dc.contributor.authorKoumoto, T.
dc.contributor.authorGeenen, Luc
dc.contributor.authorBrijs, Bert
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-15T05:27:49Z
dc.date.available2021-10-15T05:27:49Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7823
dc.sourceIIOimport
dc.titleIn-line and non-destructive analysis of epitaxial Si1-x-yGexCy by spectroscopic ellipsometry and comparison with other established techniques
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage329
dc.source.endpage338
dc.source.conferenceAnalytical and Diagnostic Techniques for Semiconductor Materials and Processes
dc.source.conferencedate27/04/2003
dc.source.conferencelocationParis Frankrijk
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; PV 2003-03


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