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Process, design and optical proximity correction requirements for the 65nm device generation

dc.contributor.authorLucas, Kevin
dc.contributor.authorMontgomery, Patrick
dc.contributor.authorLitt, Lloyd C.
dc.contributor.authorConley, Will
dc.contributor.authorPostnikov, Sergei V.
dc.contributor.authorWu, Wei
dc.contributor.authorYuan, Chi-Min
dc.contributor.authorOlivares, Marc
dc.contributor.authorStrozewski, Kirk
dc.contributor.authorCarter, Russell L.
dc.contributor.authorVasek, James
dc.contributor.authorSmith, David
dc.contributor.authorFanucchi, Eric L.
dc.contributor.authorWiaux, Vincent
dc.contributor.authorVandenberghe, Geert
dc.contributor.authorToublan, Olivier
dc.contributor.authorVerhappen, Arjan
dc.contributor.authorKuijten, Jan P.
dc.contributor.authorvan Wingerden, Johannes
dc.contributor.authorKasprowicz, Bryan S.
dc.contributor.authorTracy, Jeffrey W.
dc.contributor.authorProgler, Christopher J.
dc.contributor.authorShiro, Eugene
dc.contributor.authorTopouzov, Igor
dc.contributor.authorWimmer, Karl
dc.contributor.authorRoman, Bernard J.
dc.date.accessioned2021-10-15T05:29:44Z
dc.date.available2021-10-15T05:29:44Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7832
dc.sourceIIOimport
dc.titleProcess, design and optical proximity correction requirements for the 65nm device generation
dc.typeProceedings paper
dc.contributor.imecauthorWiaux, Vincent
dc.contributor.imecauthorVandenberghe, Geert
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage408
dc.source.endpage419
dc.source.conferenceOptical Microlithography XVI
dc.source.conferencedate23/02/2003
dc.source.conferencelocationSanta Clara, CA USA
imec.availabilityPublished - open access
imec.internalnotesProceedings of SPIE; Vol. 5040


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