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On the physical mechanisms responsible for a novel class of floating body effects in silicon-on-insulator MOSFETs

dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorRafi, Joan Marc
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorLukyanchikiva, N.
dc.contributor.authorPetrichuk, M.
dc.contributor.authorGarbar, N.
dc.date.accessioned2021-10-15T05:42:29Z
dc.date.available2021-10-15T05:42:29Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7892
dc.sourceIIOimport
dc.titleOn the physical mechanisms responsible for a novel class of floating body effects in silicon-on-insulator MOSFETs
dc.typeMeeting abstract
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpageCM1-14
dc.source.conferenceInternational Scientific Meeting Belgian Physical Society
dc.source.conferencedate27/05/2003
dc.source.conferencelocationGent Belgium
imec.availabilityPublished - open access


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