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Evidence for a "linear kink effect" in ultra-thin gate oxide SOI MOSFETs

dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorRafi, Joan Marc
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorLukyanchikova, N.
dc.contributor.authorPetrichuk, M.
dc.contributor.authorGarbar, N.
dc.date.accessioned2021-10-15T05:42:42Z
dc.date.available2021-10-15T05:42:42Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7893
dc.sourceIIOimport
dc.titleEvidence for a "linear kink effect" in ultra-thin gate oxide SOI MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage319
dc.source.endpage324
dc.source.conferenceSilicon-on-Insulator Technology and Devices XI
dc.source.conferencedate28/04/2003
dc.source.conferencelocationParis France
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. 2003-05


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