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Low-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal-oxide-semiconductor field-effect transistors

dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorvan Meer, Hans
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T05:43:07Z
dc.date.available2021-10-15T05:43:07Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7895
dc.sourceIIOimport
dc.titleLow-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal-oxide-semiconductor field-effect transistors
dc.typeJournal article
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1790
dc.source.endpage1792
dc.source.journalApplied Physics Letters
dc.source.issue11
dc.source.volume82
imec.availabilityPublished - open access


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