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N2 as alternative to H2 as carrier gas in CVD Si-epitaxy; double win-win situation

dc.contributor.authorMeunier-Beillard, Philippe
dc.contributor.authorCaymax, Matty
dc.contributor.authorVan Hoeymissen, Jan
dc.date.accessioned2021-10-15T05:44:26Z
dc.date.available2021-10-15T05:44:26Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7901
dc.sourceIIOimport
dc.titleN2 as alternative to H2 as carrier gas in CVD Si-epitaxy; double win-win situation
dc.typeOral presentation
dc.contributor.imecauthorCaymax, Matty
dc.source.peerreviewno
dc.source.conference10th ISESH Conference
dc.source.conferencedate29/06/2003
dc.source.conferencelocationNoordwijk Nederland
imec.availabilityPublished - imec


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