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Effect of irradiation temperature on radiation damage in electron-irradiated MOS FETs

dc.contributor.authorOhyama, H.
dc.contributor.authorHayama, K.
dc.contributor.authorTakakura, K.
dc.contributor.authorJono, T.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T05:52:05Z
dc.date.available2021-10-15T05:52:05Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7936
dc.sourceIIOimport
dc.titleEffect of irradiation temperature on radiation damage in electron-irradiated MOS FETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage530
dc.source.endpage535
dc.source.journalMicroelectronic Engineering
dc.source.issue1_4
dc.source.volume66
imec.availabilityPublished - open access


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