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High temperature electron irradiation effects in InGaAs photodiodes

dc.contributor.authorOhyama, H.
dc.contributor.authorTakakura, K.
dc.contributor.authorHayama, K.
dc.contributor.authorHirao, T.
dc.contributor.authorOnoda, S.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T05:53:12Z
dc.date.available2021-10-15T05:53:12Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7941
dc.sourceIIOimport
dc.titleHigh temperature electron irradiation effects in InGaAs photodiodes
dc.typeOral presentation
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conferenceGettering and Defect Engineering in Semiconductor Technology - GADEST
dc.source.conferencedate20/09/2003
dc.source.conferencelocationBerlin Germany
imec.availabilityPublished - imec


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