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Radiation damage induced in Si photodiodes by High-temerature neutron irradiation

dc.contributor.authorOhyama, H.
dc.contributor.authorTakakura, K.
dc.contributor.authorMatsuoka, H.
dc.contributor.authorJono, T.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorUemura, J.
dc.contributor.authorKishikawa, T.
dc.date.accessioned2021-10-15T05:53:52Z
dc.date.available2021-10-15T05:53:52Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7944
dc.sourceIIOimport
dc.titleRadiation damage induced in Si photodiodes by High-temerature neutron irradiation
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage437
dc.source.endpage440
dc.source.journalJournal of Materials Sscience: Materials in Electronics
dc.source.issue5_7
dc.source.volume14
imec.availabilityPublished - open access


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