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Dynamics of threshold voltage instability in stacked high-k dielectrics: role of the interfacial oxide

dc.contributor.authorPantisano, Luigi
dc.contributor.authorCartier, Eduard
dc.contributor.authorKerber, Andreas
dc.contributor.authorDegraeve, Robin
dc.contributor.authorLorenzini, Martino
dc.contributor.authorRosmeulen, Maarten
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-10-15T05:59:38Z
dc.date.available2021-10-15T05:59:38Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7970
dc.sourceIIOimport
dc.titleDynamics of threshold voltage instability in stacked high-k dielectrics: role of the interfacial oxide
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.source.peerreviewno
dc.source.beginpage163
dc.source.endpage164
dc.source.conferenceVLSI Technology Symposium
dc.source.conferencedate10/06/2003
dc.source.conferencelocationKyoto Japan
imec.availabilityPublished - imec


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