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Chemical and electrical dopant profiling for P-type junctions formed by solid phase epitaxial regrowth

dc.contributor.authorPawlak, Bartek
dc.contributor.authorLindsay, Richard
dc.contributor.authorKittl, Jorge
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorClarysse, Trudo
dc.contributor.authorHoflijk, Ilse
dc.contributor.authorDieu, B.
dc.contributor.authorGeenen, Luc
dc.contributor.authorBrijs, Bert
dc.date.accessioned2021-10-15T06:03:45Z
dc.date.available2021-10-15T06:03:45Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7988
dc.sourceIIOimport
dc.titleChemical and electrical dopant profiling for P-type junctions formed by solid phase epitaxial regrowth
dc.typeProceedings paper
dc.contributor.imecauthorPawlak, Bartek
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHoflijk, Ilse
dc.source.peerreviewno
dc.source.conferenceCharacterization and Metrology for ULSI
dc.source.conferencedate24/03/2003
dc.source.conferencelocationAustin, TX USA
imec.availabilityPublished - imec
imec.internalnotesAIP Conference Proceedings; Vol 683


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