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Radiation-induced back channel leakage in MeV-proton-irradiated 0.10 mm-CMOS partially depleted SOI MOSFETs

dc.contributor.authorRafi, Joan Marc
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorMohammadzadeh, A.
dc.date.accessioned2021-10-15T06:18:30Z
dc.date.available2021-10-15T06:18:30Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8053
dc.sourceIIOimport
dc.titleRadiation-induced back channel leakage in MeV-proton-irradiated 0.10 mm-CMOS partially depleted SOI MOSFETs
dc.typeOral presentation
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conference7th European Conference on Radiation and Its Effects on Components and Systems - RADECS
dc.source.conferencedate15/09/2003
dc.source.conferencelocationNoordwijk The Netherlands
imec.availabilityPublished - imec


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