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Integrating high-k dielectrics: etched polysilicon or metal gates?

dc.contributor.authorSchram, Tom
dc.contributor.authorBeckx, Stephan
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorVertommen, Johan
dc.contributor.authorLee, S.
dc.date.accessioned2021-10-15T06:34:54Z
dc.date.available2021-10-15T06:34:54Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8122
dc.sourceIIOimport
dc.titleIntegrating high-k dielectrics: etched polysilicon or metal gates?
dc.typeJournal article
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorBeckx, Stephan
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage61
dc.source.endpage64
dc.source.journalSolid State Technology
dc.source.issue6
dc.source.volume46
imec.availabilityPublished - imec


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