ANN model for AlGaN/GaN HEMTs constructed from near-optimal-load large-signal measurements
dc.contributor.author | Schreurs, Dominique | |
dc.contributor.author | Verspecht, Jan | |
dc.contributor.author | Vandamme, E. | |
dc.contributor.author | Vellas, N. | |
dc.contributor.author | Gaquiere, C. | |
dc.contributor.author | Germain, Marianne | |
dc.contributor.author | Borghs, Gustaaf | |
dc.date.accessioned | 2021-10-15T06:35:24Z | |
dc.date.available | 2021-10-15T06:35:24Z | |
dc.date.issued | 2003 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/8124 | |
dc.source | IIOimport | |
dc.title | ANN model for AlGaN/GaN HEMTs constructed from near-optimal-load large-signal measurements | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Schreurs, Dominique | |
dc.contributor.imecauthor | Borghs, Gustaaf | |
dc.source.peerreview | no | |
dc.source.beginpage | 447 | |
dc.source.endpage | 450 | |
dc.source.conference | IEEE International Microwave Symposium Digest - MTT-S | |
dc.source.conferencedate | 8/06/2003 | |
dc.source.conferencelocation | Philadelphia, PA USA | |
imec.availability | Published - imec |
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