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dc.contributor.authorSchreurs, Dominique
dc.contributor.authorVerspecht, Jan
dc.contributor.authorVandamme, E.
dc.contributor.authorVellas, N.
dc.contributor.authorGaquiere, C.
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-15T06:35:24Z
dc.date.available2021-10-15T06:35:24Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8124
dc.sourceIIOimport
dc.titleANN model for AlGaN/GaN HEMTs constructed from near-optimal-load large-signal measurements
dc.typeProceedings paper
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.beginpage447
dc.source.endpage450
dc.source.conferenceIEEE International Microwave Symposium Digest - MTT-S
dc.source.conferencedate8/06/2003
dc.source.conferencelocationPhiladelphia, PA USA
imec.availabilityPublished - imec


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