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Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorJob, R.
dc.contributor.authorUlyashin, A.G.
dc.contributor.authorFahrner, W.R.
dc.contributor.authorTonelli, G.
dc.contributor.authorDe Gryse, O.
dc.contributor.authorClauws, P.
dc.date.accessioned2021-10-15T06:39:18Z
dc.date.available2021-10-15T06:39:18Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8140
dc.sourceIIOimport
dc.titleDeep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpageG520
dc.source.endpageG526
dc.source.journalJournal of the Electrochemical Society
dc.source.issue9
dc.source.volume150
imec.availabilityPublished - imec


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