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Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorLoo, Roger
dc.contributor.authorDe Gryse, O.
dc.contributor.authorClauws, P.
dc.contributor.authorJob, R.
dc.contributor.authorUlyashin, A.G.
dc.contributor.authorFahrner, W.
dc.date.accessioned2021-10-15T06:39:34Z
dc.date.available2021-10-15T06:39:34Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8141
dc.sourceIIOimport
dc.titleCharacterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage207
dc.source.endpage212
dc.source.journalMaterials Science and Engineering B
dc.source.issue1_3
dc.source.volume102
imec.availabilityPublished - open access
imec.internalnotesE-MRS 2002 Symposium E: Advanced Characterisation of Semiconductors Strasbourg, 18 June - 21 June 2002


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