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High-temperature electron-irradiation induced deep levels in n-type Cz silicon

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorNeimash, V.
dc.contributor.authorKraitchinskii, A.
dc.contributor.authorKras'ko, M.
dc.contributor.authorTischenko, V.
dc.contributor.authorVoitovych, V.
dc.contributor.authorVersluys, J.
dc.contributor.authorClauws, P.
dc.date.accessioned2021-10-15T06:39:49Z
dc.date.available2021-10-15T06:39:49Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8142
dc.sourceIIOimport
dc.titleHigh-temperature electron-irradiation induced deep levels in n-type Cz silicon
dc.typeMeeting abstract
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpageCM1-17
dc.source.conferenceInternational Scientific Meeting Belgian Physical Society
dc.source.conferencedate27/05/2003
dc.source.conferencelocationGent Belgium
imec.availabilityPublished - open access


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