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Electron valence band tunnelling induced excess Lorentzian noise in fully depleted SOI transistors

dc.contributor.authorSimoen, Eddy
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorClaeys, Cor
dc.contributor.authorLukyanchikova, N.B.
dc.contributor.authorGarbar, N.
dc.date.accessioned2021-10-15T06:41:17Z
dc.date.available2021-10-15T06:41:17Z
dc.date.issued2003-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8148
dc.sourceIIOimport
dc.titleElectron valence band tunnelling induced excess Lorentzian noise in fully depleted SOI transistors
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.source.peerreviewno
dc.source.beginpage279
dc.source.endpage282
dc.source.conference33rd European Solid-State Devices Research Conference - ESSDERC
dc.source.conferencedate16/09/2003
dc.source.conferencelocationEstoril Portugal
imec.availabilityPublished - imec


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