Show simple item record

Explaining the parameters of the electron valence-band tunneling related lorentzian noise in fully depleted SOI MOSFET's

dc.contributor.authorSimoen, Eddy
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorRafi, Joan Marc
dc.contributor.authorClaeys, Cor
dc.contributor.authorLukyanchikova, N.
dc.contributor.authorGarbar, N.
dc.date.accessioned2021-10-15T06:42:36Z
dc.date.available2021-10-15T06:42:36Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8153
dc.sourceIIOimport
dc.titleExplaining the parameters of the electron valence-band tunneling related lorentzian noise in fully depleted SOI MOSFET's
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.source.peerreviewno
dc.source.beginpage751
dc.source.endpage754
dc.source.journalIEEE Electron Device Letters
dc.source.issue12
dc.source.volume24
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record