Explaining the parameters of the electron valence-band tunneling related lorentzian noise in fully depleted SOI MOSFET's

Author(s)

;

;

Rafi, Joan Marc

;

Claeys, Cor

;

Lukyanchikova, N.

;

Garbar, N.

IEEE Electron Device Letters

2058 since deposited on 2021-10-15

Acq. date: 2025-10-23