Explaining the parameters of the electron valence-band tunneling related lorentzian noise in fully depleted SOI MOSFET's

dc.contributor.author	Simoen, Eddy
dc.contributor.author	Mercha, Abdelkarim
dc.contributor.author	Rafi, Joan Marc
dc.contributor.author	Claeys, Cor
dc.contributor.author	Lukyanchikova, N.
dc.contributor.author	Garbar, N.
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.imecauthor	Mercha, Abdelkarim
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimec	Mercha, Abdelkarim::0000-0002-2174-6958
dc.date.accessioned	2021-10-15T06:42:36Z
dc.date.available	2021-10-15T06:42:36Z
dc.date.issued	2003
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/8153
dc.source.beginpage	751
dc.source.endpage	754
dc.source.issue	12
dc.source.journal	IEEE Electron Device Letters
dc.source.volume	24
dc.title	Explaining the parameters of the electron valence-band tunneling related lorentzian noise in fully depleted SOI MOSFET's
dc.type	Journal article
dspace.entity.type	Publication
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