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Explaining the parameters of the electron valence-band tunneling related lorentzian noise in fully depleted SOI MOSFET's
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Explaining the parameters of the electron valence-band tunneling related lorentzian noise in fully depleted SOI MOSFET's
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Date
2003
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Simoen, Eddy
;
Mercha, Abdelkarim
;
Rafi, Joan Marc
;
Claeys, Cor
;
Lukyanchikova, N.
;
Garbar, N.
Journal
IEEE Electron Device Letters
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2062
since deposited on 2021-10-15
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Acq. date: 2026-01-07
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Views
2062
since deposited on 2021-10-15
2
last month
2
last week
Acq. date: 2026-01-07
Citations