Show simple item record

Recovery behaviour resulting from thermal annealing in n-MOSFETs irradiated by 20MeV protons

dc.contributor.authorTakakura, K.
dc.contributor.authorOhyama, H.
dc.contributor.authorUeda, A.
dc.contributor.authorNakabayashi, M.
dc.contributor.authorHayama, K.
dc.contributor.authorKobayashi, K.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T06:55:16Z
dc.date.available2021-10-15T06:55:16Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8202
dc.sourceIIOimport
dc.titleRecovery behaviour resulting from thermal annealing in n-MOSFETs irradiated by 20MeV protons
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage506
dc.source.endpage511
dc.source.journalSemiconductor Science and Technology
dc.source.issue6
dc.source.volume18
imec.availabilityPublished - open access


Files in this item

Thumbnail
Name:
7296.pdf
Size:
143.5Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record