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Growth and physical properties of MOCVD-deposited hafnium oxide films and their properties on silicon

dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorCaymax, Matty
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorConard, Thierry
dc.contributor.authorPetry, Jasmine
dc.contributor.authorClaes, Martine
dc.contributor.authorWitters, Thomas
dc.contributor.authorZhao, Chao
dc.contributor.authorBrijs, Bert
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCarter, Richard
dc.contributor.authorKluth, Jon
dc.contributor.authorDaté, L.
dc.contributor.authorPique, D.
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-15T07:13:41Z
dc.date.available2021-10-15T07:13:41Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8272
dc.sourceIIOimport
dc.titleGrowth and physical properties of MOCVD-deposited hafnium oxide films and their properties on silicon
dc.typeProceedings paper
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage197
dc.source.endpage202
dc.source.conferenceNovel Materials and Processes for Advanced CMOS
dc.source.conferencedate2/12/2002
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 745


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