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A 0.25μm SiGe BiCMOS technology including integrated RF passive components optimised for low power applications

dc.contributor.authorVan Huylenbroeck, Stefaan
dc.contributor.authorJenei, Snezana
dc.contributor.authorCarchon, Geert
dc.contributor.authorPiontek, Andreas
dc.contributor.authorVleugels, Frank
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-15T07:16:00Z
dc.date.available2021-10-15T07:16:00Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8281
dc.sourceIIOimport
dc.titleA 0.25μm SiGe BiCMOS technology including integrated RF passive components optimised for low power applications
dc.typeProceedings paper
dc.contributor.imecauthorVan Huylenbroeck, Stefaan
dc.contributor.imecauthorVleugels, Frank
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecVan Huylenbroeck, Stefaan::0000-0001-9978-3575
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewno
dc.source.conference33rd European Solid-State Devices Research Conference - ESSDERC
dc.source.conferencedate16/09/2003
dc.source.conferencelocationEstoril Portugal
imec.availabilityPublished - imec
imec.internalnotesPoster presentation


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