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Dopant characterization techniques (atomic and carrier concentration, potential distribution)

dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-15T07:25:20Z
dc.date.available2021-10-15T07:25:20Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8317
dc.sourceIIOimport
dc.titleDopant characterization techniques (atomic and carrier concentration, potential distribution)
dc.typeOral presentation
dc.contributor.imecauthorVandervorst, Wilfried
dc.source.peerreviewno
dc.source.conferenceUltra Shallow Junctions: 7th Internat. Worksh. on the Fabrication, Characterization & Modeling of Ultra Shallow Doping Profiles
dc.source.conferencedate27/04/2003
dc.source.conferencelocationSanta Cruz, CA USA
imec.availabilityPublished - imec
imec.internalnotesTutorial


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