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Ultra low power SiGe: C HBT for 0.18μm RF-BiCMOS

dc.contributor.authorXu, Mingwei
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorVan Wichelen, Koen
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorLoo, Roger
dc.contributor.authorKunnen, Eddy
dc.contributor.authorKnorr, C.
dc.contributor.authorSadovnikov, A.
dc.contributor.authorBulucea, C.
dc.date.accessioned2021-10-15T07:52:46Z
dc.date.available2021-10-15T07:52:46Z
dc.date.issued2003-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8417
dc.sourceIIOimport
dc.titleUltra low power SiGe: C HBT for 0.18μm RF-BiCMOS
dc.typeProceedings paper
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage125
dc.source.endpage128
dc.source.conferenceTechnical Digest IEDM - International Electron Devices Meeting
dc.source.conferencedate7/12/2003
dc.source.conferencelocationWashington DC USA
imec.availabilityPublished - imec


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